| PART |
Description |
Maker |
| IBM11S2325LP-6RT IBM11S1325LP-70T IBM11S1325LP-6RT |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Abracon, Corp.
|
| IBM11S2325HM-70T IBM11S4325HM-70T |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Data Delay Devices, Inc.
|
| HB56G232B-6 HB56G132B-6 HB56G232B-6L |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Bourns, Inc.
|
| IBM11E1320B-60 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Etron Technology, Inc
|
| HB56G51232SB-7CL HB56G51232SB-8CL HB56G51232B-7C |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Analog Devices, Inc.
|
| IBM11S2320HM-70T IBM11S4320HM-70T IBM11S4320HP-60T |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Ecliptek, Corp.
|
| IBM11S2320HLB-70 IBM11S2320HNA-60 IBM11S2320HLA-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Hanbit Electronics Co., Ltd.
|
| IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式（3.3伏，4米4带扩展数据输出页模式动态随机存储器（刷k）的
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
